Universal behavior of magnetoresistance in quantum dot arrays with different degrees of disorder
نویسندگان
چکیده
منابع مشابه
Universal behavior of magnetoresistance in quantum dot arrays with different degrees of disorder.
The magnetoresistance in a two-dimensional array of Ge/Si quantum dots was studied in a wide range of zero magnetic field conductances, where the transport regime changes from a hopping to a diffusive one. The behavior of the magnetoresistance is found to be similar for all samples--it is negative in weak fields and becomes positive with increasing magnetic field. The result apparently contradi...
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ترانسفورماتورهای قدرت از اجزای اصلی شبکه تامین انرژی الکتریکی می باشند که عملکرد قابل اطمینان ترانسفورماتورها یکی از فاکتورهای مهم و تعیین کننده در تامین انرژی الکتریکی محسوب می شود. در نتیجه بررسی و مانیتور عملکرد ترانسفورماتورها در شبکه و همچنین عیب یابی این ترانسفورماتورها غیرقابل اجتناب و ضروری می باشد. به طور کلی عایق های مایع در صنعت فشار قوی کاربردهای متفاوتی دارند که مهمترین وظیفه آنها...
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Energy Levels of InGaAs/GaAs Quantum Dot Lasers with Different Sizes
In this paper, we have studied the strain, band-edge, and energy levels of cubic InGaAs quantum dots (QDs) surrounded by GaAs. It is shown that overall strain value is larger in InGaAs-GaAs interfaces, as well as in smaller QDs. Also, it is proved that conduction and valence band-edges and electron-hole levels are size dependent; larger QD sizes appeared to result in the lower recombination...
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ژورنال
عنوان ژورنال: Journal of Physics: Condensed Matter
سال: 2013
ISSN: 0953-8984,1361-648X
DOI: 10.1088/0953-8984/25/50/505801